AlF(3) thin films deposited by reactive magnetron sputtering with Al target

Aluminum fluoride thin films have been deposited by magnetron sputtering of an aluminum target with CF(4) , and CF(4) mixed O(2) as the working gas onto a room temperature substrate. The quality of the coated AlF(3) film applied with 25W sputtering power using CF(4) mixed 5% O(2) was better than for films deposited using conventional methods. The extinction coefficient of AlF(3) was smaller than 6.0x10(-4) in the wavelength range of 190nm to 250nm. Single layer antireflection coatings on both sides of a fused silica substrate increased the transmittance from less than 91% for a bare substrate to higher than 96% in the wavelength range between 190nm to 250nm.