Single-frequency Ince-Gaussian mode operations of laser-diode-pumped microchip solid-state lasers

Area of Science:

• Laser Physics and Optics
• Solid-State Lasers
• Nonlinear Optics

Background:

• Microchip solid-state lasers offer compact and efficient laser sources.
• Controlling transverse mode patterns is crucial for laser performance and applications.
• Ince-Gaussian (IG) modes are complex beam profiles with unique properties.

Purpose of the Study:

• To achieve and investigate single-frequency Ince-Gaussian mode oscillations in laser-diode-pumped microchip solid-state lasers.
• To explore the influence of resonator geometry on IG mode formation.
• To validate experimental observations through numerical simulations.

Main Methods:

• Utilized laser-diode-pumped microchip solid-state laser cavities, specifically LiNdP(4)O(12) (LNP) and Nd:GdVO(4) materials.
• Adjusted the azimuthal symmetry of the short laser resonator to control mode formation.
• Employed numerical simulation to reproduce and analyze the astigmatically pumped IG modes.

Main Results:

• Successfully achieved various single-frequency Ince-Gaussian mode oscillations in the investigated laser systems.
• Demonstrated that controlling resonator azimuthal symmetry is key to obtaining specific IG modes.
• Numerical simulations accurately reproduced the experimentally observed IG modes, confirming the role of astigmatic pumping.

Conclusions:

• Single-frequency Ince-Gaussian modes can be reliably generated in diode-pumped microchip solid-state lasers.
• Resonator design, particularly azimuthal symmetry, provides a practical method for controlling complex beam modes.
• Numerical modeling serves as a valuable tool for understanding and predicting IG mode behavior in such lasers.