High-power 894 nm monolithic distributed-feedback laser.

Area of Science:

• Semiconductor Lasers
• Atomic Spectroscopy
• Quantum Optics

Background:

• High-power, single-mode diode lasers are crucial for precise atomic spectroscopy.
• Caesium D1 line spectroscopy requires stable laser sources with narrow linewidths.

Purpose of the Study:

• To develop and characterize a ridge-waveguide InGaAs/GaAsP diode laser for caesium D1 spectroscopy.
• To demonstrate the laser's suitability for measuring the hyperfine structure of the caesium D1 line.

Main Methods:

• Fabrication of a ridge-waveguide laser with a second-order distributed feedback grating.
• Characterization of laser output power, mode properties, and spectral characteristics.
• Spectroscopic measurement of the caesium D1 line hyperfine structure.

Main Results:

• The laser emits up to 250 mW in a single lateral and longitudinal mode at 894 nm.
• Stable lasing frequency, side mode suppression ratio > 40 dB, and spectral line width < 200 kHz were achieved.
• Successful measurement of the caesium D1 line hyperfine structure was performed.

Conclusions:

• The developed InGaAs/GaAsP diode laser is highly suitable for caesium D1 spectroscopy.
• The laser's performance characteristics enable precise atomic structure measurements.
• This work contributes to the development of advanced laser sources for atomic physics applications.