MOS Capacitor
Spherical and Cylindrical Capacitor
Non-ohmic Devices
Design Example: Capacitance Multiplier Circuit
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Gradient Echo Quantum Memory in Warm Atomic Vapor
Published on: November 11, 2013
Yiming Li1, Chih-Hong Hwang, Tien-Yeh Li
1Department of Electrical Engineering, National Chiao-Tung University, Hsinchu, Taiwan. ymli@faculty.nctu.edu.tw
Optimizing phase change memories (PCMs) using germanium antimony telluride (GST) involves structural modifications. Shifting the bottom electrode contact (BEC) significantly reduces programming current, enhancing PCM performance and device design.
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Published on: July 17, 2020
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