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PINIP based high-speed high-extinction ratio micron-size silicon electrooptic modulator
Optics Express
|June 25, 2009
Summary
We developed a novel silicon electrooptic device for high-speed optical communication. This p-i-n-i-p structure achieves 100 GHz operation with low power consumption, enabling faster data transmission.
Area of Science:
- Photonics
- Optoelectronics
- Materials Science
Background:
- High-speed optical modulators are crucial for modern data communication networks.
- Existing silicon-based modulators face limitations in speed and power efficiency.
Purpose of the Study:
- To propose and analyze a novel silicon electrooptic device for high-frequency operation.
- To demonstrate the potential for ultra-high-speed data transmission using silicon photonics.
Main Methods:
- Design of a p-i-n-i-p device structure for efficient charge carrier transport.
- Integration of the device into a resonator for enhanced modulation.
- Characterization of key performance metrics including speed, extinction ratio, and power dissipation.
Main Results:
- Achieved carrier injection time of 10 ps and extraction time of 15 ps.
- Demonstrated 100 GHz potential operation speed.
- Integrated device operates at 40 Gb/s with a 12 dB extinction ratio.
- Reported power dissipation of 4 fJ/bit/micron-length.
Conclusions:
- The proposed silicon electrooptic device offers a promising solution for next-generation optical communication.
- Device speed is primarily limited by the photon lifetime of the resonator.
- Low power consumption and high speed make it suitable for dense integration.
