1240nm high-power GaInNAs laser diodes

Area of Science:

• Semiconductor Physics
• Optoelectronics
• Materials Science

Background:

• High-power semiconductor lasers are crucial for various applications.
• Gallium Indium Nitrogen Arsenide (GaInNAs) material system offers potential for specific wavelength emission.
• Improving efficiency and power output of laser diodes remains an active research area.

Purpose of the Study:

• To fabricate and characterize high-power semiconductor laser diodes emitting at 1240nm.
• To achieve record low threshold current densities and high continuous wave output power.
• To evaluate the efficiency and preliminary lifetime of the fabricated devices.

Main Methods:

• Fabrication of 1240nm GaInNAs semiconductor laser diodes.
• Characterization of device performance under pulsed and continuous wave (CW) operation.
• Measurement of threshold current density, output power, wallplug efficiency, and internal quantum efficiency.
• Preliminary lifetime testing at high-power operation.

Main Results:

• Record low threshold current densities of 174 Acm(-2) achieved in pulsed operation for 1000 μm x 100 μm devices.
• Continuous wave output powers exceeding 4.6 Watts at room temperature and 6.2 Watts at -5°C for 1300 μm x 200 μm devices.
• Maximum wallplug efficiency over 40% and internal quantum efficiency reaching 0.89.
• Preliminary 1000-hour lifetime tests demonstrated stable high-power operation.

Conclusions:

• The fabricated 1240nm GaInNAs semiconductor laser diodes represent a significant advancement in high-power laser technology.
• The devices exhibit excellent performance metrics, including record low threshold currents and high output powers.
• The stable operation observed in preliminary lifetime tests indicates the potential for reliable, long-term use in demanding applications.