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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

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Construction and Characterization of External Cavity Diode Lasers for Atomic Physics
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Low voltage-defect quantum cascade laser with heterogeneous injector regions.

Anthony J Hoffman, Stephan Schartner, Scott S Howard

    Optics Express
    |June 25, 2009
    PubMed
    Summary

    This study presents a novel quantum cascade laser (QCL) with heterogeneous injectors, achieving low voltage defect operation. The developed InAlAs/InGaAs QCL demonstrates high power output and efficiency at a 4.7 µm wavelength.

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    Area of Science:

    • Semiconductor Optoelectronics
    • Quantum Electronics
    • Materials Science

    Background:

    • Quantum cascade lasers (QCLs) are crucial semiconductor devices for mid-infrared applications.
    • Voltage defects in QCLs can limit performance and efficiency.
    • Heterogeneous injector designs offer a potential solution for mitigating voltage defects.

    Purpose of the Study:

    • To demonstrate a strain-compensated InAlAs/InGaAs quantum cascade laser utilizing heterogeneous injectors.
    • To achieve low voltage defect operation through optimized undoped and doped injector regions.
    • To evaluate the laser's performance characteristics, including power output and wall-plug efficiency.

    Main Methods:

    • Fabrication of a quantum cascade laser with interdigitated undoped and doped injector regions.
    • Design of undoped injectors for reduced voltage defect and conventional doped injectors.
    • Characterization of the laser's voltage defect, emission wavelength, output power, and efficiency at 80 K.

    Main Results:

    • The fabricated InAlAs/InGaAs QCL exhibited an average voltage defect below 79 meV.
    • The laser achieved a 4.7 µm emission wavelength at 80 K.
    • A peak pulsed power of 2.3 W and a peak wall-plug efficiency of 19% were recorded.

    Conclusions:

    • Heterogeneous injector designs effectively reduce voltage defects in quantum cascade lasers.
    • The demonstrated InAlAs/InGaAs QCL offers high performance for mid-infrared applications.
    • This work paves the way for more efficient and lower-voltage mid-infrared laser devices.