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Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

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Implementation of a Reference Interferometer for Nanodetection
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Efficient waveguide-integrated tunnel junction detectors at 1.6 mum.

Philip C D Hobbs, Robert B Laibowitz, Frank R Libsch

    Optics Express
    |June 25, 2009
    PubMed
    Summary

    We developed novel near-infrared detectors using metal-insulator-metal tunnel junctions and silicon nanowire waveguides. These broadband detectors achieve 6% quantum efficiency, overcoming previous limitations in antenna-coupled devices.

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    Area of Science:

    • Photonics
    • Nanotechnology
    • Electrical Engineering

    Background:

    • Metal-insulator-metal (MIM) tunnel junctions are explored for optoelectronic applications.
    • Antenna-coupled devices offer potential for high-speed detection but suffer from low efficiencies.
    • Silicon nanowire waveguides provide a platform for integrated optical devices.

    Purpose of the Study:

    • To present the first near-infrared detectors based on MIM tunnel junctions integrated with planarized silicon nanowire waveguides.
    • To demonstrate broadband operation and efficient coupling in antenna-coupled tunnel junction devices.
    • To address and overcome the limitations of low quantum efficiencies in previous designs.

    Main Methods:

    • Fabrication of Ni-NiO-Ni tunnel junctions and multilayer gold-nickel antennas using electron-beam lithography and directional deposition.
    • Integration of devices with planarized silicon nanowire waveguides using shallow trench isolation technology.
    • Design of a plasmonic travelling wave structure for efficient coupling between the antenna and tunnel junction.

    Main Results:

    • Demonstration of broadband operation from 1500-1700 nm.
    • Achieved overall quantum efficiencies of 6% (0.08 A/W responsivity at 1.605 µm).
    • Elimination of losses due to poor mode matching and RC rolloff through careful antenna and travelling wave region design.

    Conclusions:

    • The developed detectors represent a significant advancement in antenna-coupled tunnel junction technology.
    • The achieved efficiency validates the design approach, attributing previous low efficiencies to electromagnetic coupling and antenna material.
    • This work paves the way for efficient, broadband near-infrared detection integrated on silicon photonics platforms.