Widely tunable coupled-cavity semiconductor laser
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Updated: Jun 22, 2026

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics
Published on: April 24, 2014
Ferdous K Khan1, Daniel T Cassidy
1Department of Engineering Physics, McMaster University, JHE-A315, 1280 Main Street West, Hamilton, Ontario L8S 4L8, Canada. khanfk@mcmaster.ca
Abstract:
We describe a widely tunable coupled-cavity semiconductor laser with a nearly continuous tuning capability of approximately 100 nm. A below threshold model for coupled-cavity devices using a transfer matrix approach that takes into account the tilt of the facets forming the gap between the coupled sections was developed and is presented. Nonlinear fits of the below-threshold spectra to the model were used to extract device parameters. These fits and parameters were then used to understand the operation of the devices and the direction to take to improve the performance of the devices. It is observed that for facet angles > or = 7 degrees, a two-section coupled-cavity device works like an injection-locked laser, while for angles < or = 4 degrees, the sections work as a truly-coupled system.
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