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Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Published on: April 24, 2014

Widely tunable coupled-cavity semiconductor laser.

Ferdous K Khan¹, Daniel T Cassidy

¹Department of Engineering Physics, McMaster University, JHE-A315, 1280 Main Street West, Hamilton, Ontario L8S 4L8, Canada. khanfk@mcmaster.ca

|July 3, 2009

Summary

Researchers developed a tunable semiconductor laser with 100 nm tuning. Device performance was improved by analyzing below-threshold spectra using a transfer matrix model, revealing distinct operational modes based on facet angles.

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Area of Science:

Optics and Photonics
Semiconductor Devices
Laser Technology

Background:

Tunable semiconductor lasers are crucial for various applications, including spectroscopy and optical communications.
Coupled-cavity semiconductor lasers offer potential for enhanced tuning capabilities.
Understanding the operational dynamics of these devices is key to optimizing their performance.

Purpose of the Study:

To describe a widely tunable coupled-cavity semiconductor laser with a tuning range of approximately 100 nm.
To develop and present a below-threshold model for coupled-cavity devices using a transfer matrix approach.
To extract device parameters and understand operational modes for performance improvement.

Main Methods:

Development of a below-threshold model incorporating facet tilt using a transfer matrix approach.
Application of nonlinear fits to below-threshold spectra for device parameter extraction.
Analysis of device operation based on extracted parameters and facet angles.

Main Results:

A coupled-cavity semiconductor laser with a nearly continuous tuning capability of approximately 100 nm was demonstrated.
The developed model accurately fits experimental below-threshold spectra, enabling parameter extraction.
Facet angles significantly influence device operation: > or = 7 degrees leads to injection-locked behavior, while < or = 4 degrees results in a truly-coupled system.

Conclusions:

The transfer matrix model provides valuable insights into coupled-cavity semiconductor laser operation.
Device performance can be optimized by controlling facet angles to achieve desired operational modes.
This work contributes to the advancement of widely tunable semiconductor laser technology.