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Related Concept Videos

Schottky Barrier Diode01:27

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
Dielectric Polarization in a Capacitor01:31

Dielectric Polarization in a Capacitor

The presence of a dielectric medium in a capacitor not only changes the voltage and capacitance but also affects the electric field. In general, dielectrics can be of two types: polar and nonpolar. In a polar dielectric, the positive and negative charges in the molecules are separated by a distance and hence have a permanent dipole moment. In contrast, no such charge separation exists in a nonpolar dielectric, however the nonpolar molecules get polarized in the presence of an external electric...
Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Diode: Forward bias01:20

Diode: Forward bias

In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...
Diode: Reverse bias01:14

Diode: Reverse bias

A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

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Related Experiment Video

Updated: Jun 22, 2026

A Photonic System for Generating Unconditional Polarization-Entangled Photons Based on Multiple Quantum Interference
07:56

A Photonic System for Generating Unconditional Polarization-Entangled Photons Based on Multiple Quantum Interference

Published on: September 5, 2019

Coherent polarization locking of a diode emitter array.

S P Ng1, P B Phua

  • 1Temasek Laboratories & School of Physical and Mathematical Science, Nanyang Technological University, Singapore.

Optics Letters
|July 3, 2009
PubMed
Summary

Researchers achieved coherent combining of diode emitters using polarization locking, boosting laser brightness by 50 times. This method enhances diode bar performance for high-power laser applications.

Area of Science:

  • Optics and Photonics
  • Laser Physics
  • Semiconductor Lasers

Background:

  • Diode bars are crucial light sources but often suffer from low brightness due to incoherent emission.
  • Coherent combining of multiple emitters is a key challenge for high-power laser systems.

Purpose of the Study:

  • To demonstrate a novel technique for coherent combining of diode emitters in a standard diode bar.
  • To enhance the brightness of diode laser arrays.

Main Methods:

  • Utilized a coherent polarization locking technique with an external laser cavity.
  • Employed birefringent walk-off crystals and a polarizing beam splitter for passive phase locking.
  • Spatially overlapped emissions from four diode emitters.

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Automation of Mode Locking in a Nonlinear Polarization Rotation Fiber Laser through Output Polarization Measurements
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Automation of Mode Locking in a Nonlinear Polarization Rotation Fiber Laser through Output Polarization Measurements

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Construction and Characterization of External Cavity Diode Lasers for Atomic Physics
09:10

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Published on: April 24, 2014

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Last Updated: Jun 22, 2026

A Photonic System for Generating Unconditional Polarization-Entangled Photons Based on Multiple Quantum Interference
07:56

A Photonic System for Generating Unconditional Polarization-Entangled Photons Based on Multiple Quantum Interference

Published on: September 5, 2019

Automation of Mode Locking in a Nonlinear Polarization Rotation Fiber Laser through Output Polarization Measurements
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Automation of Mode Locking in a Nonlinear Polarization Rotation Fiber Laser through Output Polarization Measurements

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Construction and Characterization of External Cavity Diode Lasers for Atomic Physics
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Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

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Main Results:

  • Successfully demonstrated coherent combining of four diode emitters.
  • Achieved a coherently combined output power of 1030 mW.
  • Increased the laser brightness of the diode bar by approximately 50 times.

Conclusions:

  • Coherent polarization locking is an effective method for enhancing diode bar brightness.
  • The demonstrated technique offers a pathway to high-brightness, high-power semiconductor laser sources.
  • This advancement has implications for various laser applications requiring high beam quality.