Related Experiment Video
Updated: Jun 22, 2026
10:17
20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier
Published on: July 12, 2017
Multi-mJ, 200-fs, cw-pumped, cryogenically cooled, Yb,Na:CaF2 amplifier.
A Pugzlys1, G Andriukaitis, A Baltuska
1Photonics Institute, Vienna University of Technology, Vienna, Austria. pugzlys@tuwien.ac.at
Optics Letters
|July 3, 2009
Summary
Researchers developed a new Yb-doped laser amplifier using Yb3+,Na+:CaF2 crystal, achieving 3 mJ pulse energy and 195 fs pulse duration. This advancement offers high-energy, ultrashort pulse generation for laser applications.
Area of Science:
- Laser Physics
- Materials Science
Background:
- Broadband Ytterbium (Yb)-doped crystals are crucial for generating ultrashort laser pulses.
- Achieving high pulse energy and short pulse duration simultaneously presents significant challenges in laser amplifier design.
Purpose of the Study:
- To demonstrate a novel chirped pulse regenerative laser amplifier utilizing a Yb3+,Na+:CaF2 crystal.
- To achieve high pulse energy and ultrashort pulse durations with a broadband gain medium.
Main Methods:
- Employed a novel broadband Yb-doped Yb3+,Na+:CaF2 crystal cooled to 130 K.
- Utilized spectral shaping to compensate for gain narrowing in the laser crystal.
- Recompressed amplified pulses using a transmission grating compressor.
Main Results:
- Delivered pulse energy up to 3 mJ at 1 kHz and 6 W average output power at 20 kHz.
- Obtained a 12 nm Full Width at Half Maximum (FWHM) bandwidth, supporting 130 fs pulse duration.
- Recompressed amplified pulses from 250 picoseconds (ps) to 195 femtoseconds (fs).
Conclusions:
- The Yb3+,Na+:CaF2 crystal enables efficient chirped pulse amplification.
- The developed laser amplifier system achieves high pulse energy and ultrashort pulse durations.
- This work advances the capabilities of Yb-doped fiber amplifiers for scientific applications.
Related Concept Videos
01:17MOSFET Amplifiers
The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
01:14BJT Amplifiers
Bipolar Junction Transistors (BJTs) are pivotal components in amplifier circuits, functioning as voltage-controlled current sources in their active region. This characteristic allows them to efficiently control the collector current through variations in the base-emitter voltage. Essentially, BJTs amplify power due to their ability to take a weak input signal and output a much stronger signal.
In BJT amplifier configurations, particularly in common-emitter setups, the transistor's role extends...
In BJT amplifier configurations, particularly in common-emitter setups, the transistor's role extends...
01:16Cascaded Op Amps
Operational amplifiers (op-amps) are versatile electronic components that can be interconnected in a cascade - one after another in a linear sequence. This cascading is possible due to their infinite input resistance and zero output resistance, allowing them to maintain their input-output relationships even when connected in series.
In a cascaded system, each op-amp is referred to as a stage. The output of one stage drives the input of the subsequent stage. As the input signal passes through...
In a cascaded system, each op-amp is referred to as a stage. The output of one stage drives the input of the subsequent stage. As the input signal passes through...
01:23Small-Signal Analysis of MOSFET Amplifiers
In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
01:21Small-Signal Analysis of BJT Amplifiers
Small signal analysis is a fundamental approach used in electronics to understand how a Bipolar Junction Transistor (BJT) amplifier processes signals. In the active region, the BJT is designed for linear amplification. The transistor's behavior under these conditions is governed by its instantaneous base-emitter voltage VBE, a sum of the DC bias VBE, and a small AC signal VBE, resulting in the collector current iC. Here, the collector current has a DC component and an AC component.