Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

Imperfections in Crystal Structure: Stoichiometric Point Defects

Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...
Imperfections in Crystal Structure: Point, Line and Plane Defects01:25

Imperfections in Crystal Structure: Point, Line and Plane Defects

A perfect crystal, in theory, has a uniform structure with the same unit cell and lattice points throughout. However, any deviation from this periodic arrangement is known as an imperfection or defect. These defects can be categorized into three types: point, line, and plane defects.Point defects occur when there is a deviation from the ideal due to missing atoms, displaced atoms, or additional atoms. These imperfections might occur due to imperfect packing during crystallization or because of...
Ionic Crystal Structures02:42

Ionic Crystal Structures

Ionic crystals consist of two or more different kinds of ions that usually have different sizes. The packing of these ions into a crystal structure is more complex than the packing of metal atoms that are the same size.
Most monatomic ions behave as charged spheres, and their attraction for ions of opposite charge is the same in every direction. Consequently, stable structures for ionic compounds result (1) when ions of one charge are surrounded by as many ions as possible of the opposite...
Imperfections in Crystal Structure: Non-Stoichiometric Defects01:29

Imperfections in Crystal Structure: Non-Stoichiometric Defects

Non-stoichiometric defects refer to a type of defect in the crystal structure of a compound where the ratio of its constituent elements deviates from the ideal stoichiometric ratio. There are two main types of non-stoichiometric defects: metal excess defects and metal deficiency defects.Metal excess defects occur when there is a slight surplus of metal ions than what is required by the stoichiometric ratio of the compound. For example, heating a sodium chloride crystal in sodium vapor results...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Nanocavities and germanium nanocrystals produced by Ge ion implantation in fused silica.

Nanotechnology·2012
Same author

Electroluminescence microspectroscopy of silicon nanocrystals obtained by Si(+) ion implantation in SiO(2).

Nanotechnology·2011
Same author

Evidence of localized amorphous silicon clustering from Raman depth-probing of silicon nanocrystals in fused silica.

Nanotechnology·2011
Same author

Characterization of Si nanocrystals by different TEM-based techniques.

Ultramicroscopy·2009
Same author

Online system for temperature and accumulated dose control in plasma-based ion implantation.

The Review of scientific instruments·2007
Same author

[Experimental studies on hyperthermic distilled water combining with saline and dextran for preventing intraperitoneal cancer recurrence due to neoplasm seeding].

Hunan yi ke da xue xue bao = Hunan yike daxue xuebao = Bulletin of Hunan Medical University·2002

Related Experiment Video

Updated: Jun 21, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Dislocations in Si nanocrystals embedded in SiO2.

Y Q Wang1, T Li, W S Liang

  • 1The Cultivation Base for the State Key Laboratory, Qingdao University, No. 308, Ningxia Road, Qingdao 266071, People's Republic of China. yqwang@qdu.edu.cn

Nanotechnology
|July 15, 2009
PubMed
Summary

Dislocations within silicon nanocrystals (Si nc) formed by ion implantation and annealing can impact their light-emitting properties. Understanding these crystal defects is crucial for optimizing Si nc for optoelectronic applications.

More Related Videos

Synchrotron X-ray Microdiffraction and Fluorescence Imaging of Mineral and Rock Samples
10:12

Synchrotron X-ray Microdiffraction and Fluorescence Imaging of Mineral and Rock Samples

Published on: June 19, 2018

Characterization of Nanocrystal Size Distribution using Raman Spectroscopy with a Multi-particle Phonon Confinement Model
06:54

Characterization of Nanocrystal Size Distribution using Raman Spectroscopy with a Multi-particle Phonon Confinement Model

Published on: August 22, 2015

Related Experiment Videos

Last Updated: Jun 21, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Synchrotron X-ray Microdiffraction and Fluorescence Imaging of Mineral and Rock Samples
10:12

Synchrotron X-ray Microdiffraction and Fluorescence Imaging of Mineral and Rock Samples

Published on: June 19, 2018

Characterization of Nanocrystal Size Distribution using Raman Spectroscopy with a Multi-particle Phonon Confinement Model
06:54

Characterization of Nanocrystal Size Distribution using Raman Spectroscopy with a Multi-particle Phonon Confinement Model

Published on: August 22, 2015

Area of Science:

  • Materials Science
  • Nanotechnology
  • Solid State Physics

Background:

  • Silicon nanocrystals (Si nc) embedded in silicon dioxide (SiO2) are promising for optoelectronic devices.
  • Defects within Si nc can significantly alter their optical and electronic properties.

Purpose of the Study:

  • To investigate the types and formation mechanisms of dislocations in Si nc.
  • To understand the influence of these dislocations on the photoluminescence of Si nc.

Main Methods:

  • Formation of Si nc by Si(+) implantation into SiO2 on Si, followed by high-temperature annealing.
  • High-resolution transmission electron microscopy (HRTEM) for defect analysis.
  • Analysis of dislocation types: perfect, extended, and mismatch dislocations.

Main Results:

  • Observation of perfect, extended, and mismatch dislocations within Si nc produced by high-dose implantation (3 x 10(17) cm(-2)).
  • Discussion of potential formation mechanisms for the observed dislocations.
  • Correlation between dislocation presence and photoluminescence properties is anticipated.

Conclusions:

  • High-dose ion implantation leads to complex dislocation structures within Si nc.
  • These dislocations are expected to play a significant role in the photoluminescence behavior of Si nc.
  • Further research is needed to fully elucidate the structure-property relationships for defect engineering in Si nc.