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Surface chemical modification induces nanometer scale electron confinement in field effect device.

Gil Shalev1, Eliezer Halpern, Amihood Doron

  • 1Intel Research Israel Laboratory, Intel Electronics, Jerusalem 91031, Israel.

The Journal of Chemical Physics
|July 17, 2009
PubMed
Summary

Chemical modification of silicon-on-insulator (SOI) ion-sensitive field-effect transistors with organic layers optimizes sensing. Surface activation creates negative charges, enhancing transistor performance and pH sensitivity by confining electrons to a thin channel.

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Area of Science:

  • Materials Science and Engineering
  • Surface Chemistry
  • Semiconductor Device Physics

Background:

  • Physicochemical properties of molecular assemblies are challenging to control.
  • Chemical modification of field-effect sensor gates impacts electrical properties.
  • Optimizing organic gates is crucial for effective chemical sensing.

Purpose of the Study:

  • To analyze the effect of surface chemical modification on electronic performance.
  • To investigate the role of organic molecular layers in field-effect sensor devices.
  • To understand how surface activation influences the properties of silicon-on-insulator transistors.

Main Methods:

  • Utilized fully depleted silicon-on-insulator (SOI) ion-sensitive field-effect transistors.
  • Performed surface activation and applied 3-aminopropyltrimethoxysilane.

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  • Analyzed transistor gain and pH sensitivity before and after UV/O3 treatment.

    • Main Results:

    • Surface modification introduced negative charge at the Si/SiO(2) interface or gate dielectric.
    • This resulted in an accumulation layer confining electrons to the bottom of the SOI channel.
    • Post-modification transistor gain indicated volume inversion, with electrons confined to <10 nm SOI thickness.
    • UV/O3 treatment maximized pH sensitivity, correlating with increased negatively charged amphoteric sites.

    Conclusions:

    • Surface chemical modification, specifically activation and silane application, significantly alters SOI transistor electronic properties.
    • The observed volume inversion and electron confinement are attributed to introduced negative charges.
    • Optimized surface activation enhances sensor performance, particularly pH sensitivity, by maximizing charged sites.