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Related Experiment Video

Updated: Jun 21, 2026

Nanoscale Characterization of Liquid-Solid Interfaces by Coupling Cryo-Focused Ion Beam Milling with Scanning Electron Microscopy and Spectroscopy
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Low temperature Ga surface diffusion from focused ion beam milled grooves.

A Mikkelsen1, E Hilner, J N Andersen

  • 1Synchrotron Radiation Research, Lund University, Box 118, SE-22100 Lund, Sweden. anders.mikkelsen@sljus.lu.se

Nanotechnology
|July 22, 2009
PubMed
Summary
This summary is machine-generated.

Gallium (Ga) rapidly diffuses from focused ion beam (FIB) milled grooves upon annealing. This surface diffusion, observed via X-ray Photoemission Electron Microscopy (XPEEM), forms a thin Ga layer, even at low temperatures.

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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

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Area of Science:

  • Surface Science
  • Materials Science
  • Nanotechnology

Background:

  • Focused Ion Beam (FIB) milling is a common technique for creating nanoscale structures.
  • Understanding material behavior, such as diffusion, after FIB processing is crucial for device fabrication and reliability.
  • Gallium (Ga) is often used in FIB applications, and its diffusion characteristics are of interest.

Purpose of the Study:

  • To investigate the surface diffusion of Gallium (Ga) from FIB-milled grooves.
  • To analyze the surface chemistry and morphological changes associated with Ga diffusion.
  • To develop an atomic-scale model explaining the observed diffusion behavior.

Main Methods:

  • Utilized X-ray Photoemission Electron Microscopy (XPEEM) and Mirror Electron Microscopy (MEM) to study Ga diffusion.
  • Analyzed the presence of Ga in the top layers of FIB-milled grooves and their morphological defects.
  • Performed annealing experiments at temperatures as low as 150°C.

Main Results:

  • Initially, Ga was confined to the FIB-milled grooves.
  • Annealing at 150°C induced rapid and significant surface diffusion of Ga.
  • Out-diffused Ga formed a thin, irregularly patterned layer extending microns laterally, enhanced at crystallite edges.

Conclusions:

  • Gallium diffusion from FIB structures is significant even at low annealing temperatures.
  • An atomic-scale model explains Ga diffusion via interstitial movement and substitution of silanol groups.
  • Findings are critical for controlling Ga distribution in FIB-processed materials.