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Atomic layer deposition of ZnS nanotubes
Sh Farhangfar1, R B Yang, M Pelletier
1Institute of Applied Physics, University of Hamburg, Jungiusstrasse 11, D-20355 Hamburg, Germany. sfarhang@physik.uni-hamburg.de
Nanotechnology
|July 22, 2009
Summary
High-aspect-ratio zinc sulfide nanotubes were synthesized using atomic layer deposition (ALD) at low temperatures. This method allows precise control over nanotube dimensions for potential applications and fundamental studies.
Area of Science:
- Materials Science
- Nanotechnology
- Chemical Engineering
Background:
- Atomic Layer Deposition (ALD) enables precise thin-film growth.
- Anodic alumina templates offer highly ordered porous structures.
- Controlling nanotube dimensions is crucial for advanced applications.
Purpose of the Study:
- To synthesize high-aspect-ratio zinc sulfide (ZnS) nanotubes.
- To achieve tunable wall thicknesses and tube diameters.
- To explore ALD for low-temperature nanotube fabrication.
Main Methods:
- Utilized atomic layer deposition (ALD) for ZnS growth.
- Employed highly ordered anodic alumina as a template.
- Conducted synthesis at temperatures as low as 75°C.
Main Results:
- Successfully grew high-aspect-ratio (approx. > 300) ZnS nanotubes.
- Achieved precise tunability of wall thickness and tube diameter.
- Characterized composition, morphology, and crystal structure of nanotubes.
Conclusions:
- ALD is effective for low-temperature synthesis of tunable ZnS nanotubes.
- The synthesized nanotubes have potential in practical applications.
- These nanotubes can serve as model systems for size-dependent phenomena.
