An electrically modifiable synapse array of resistive switching memory
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Updated: Jun 21, 2026

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
Published on: March 9, 2019
Hyejung Choi1, Heesoo Jung, Joonmyoung Lee
1Department of Material Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, Korea.
Abstract:
This paper describes the resistive switching of a cross-point cell array device, with a junction area of 100 nm x 100 nm, fabricated using ultraviolet nanoimprinting. A GdO(x) and Cu-doped MoO(x) stack with platinum top and bottom electrodes served as the resistive switching layer, which shows analog memory characteristics with a resistance ratio greater than 10. To demonstrate a neural network circuit, we operated the cell array device as an electrically modifiable synapse array circuit and carried out a weighted sum operation. This demonstration of cross-point arrays, based on resistive switching memory, opens the way for feasible ultra-high density synapse circuits for future large-scale neural network systems.
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