Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Electrical Synapses01:28

Electrical Synapses

Electrical synapses found in all nervous systems play important and unique roles. In these synapses, the presynaptic and postsynaptic membranes are very close together (3.5 nm) and are actually physically connected by channel proteins forming gap junctions.
Gap junctions allow the current to pass directly from one cell to the next. In contrast, in the chemical synapse, the neurotransmitters carry the information through the synaptic cleft from one neuron to the next. They consist of two...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Types of Reversible Electrodes01:24

Types of Reversible Electrodes

For electrode reversibility to be maintained, all the reactants and products involved in the half-reaction must be present at the electrode. There are several types of reversible electrodes (half-cells).In metal-metal-ion electrodes, a metal balances electrochemically with a solution of its own ions. Examples are Cu2+|Cu and Zn2+|Zn. Metals that react with the solvent, like group 1 and most group 2 metals, which react with water, and zinc, which reacts with aqueous acidic solutions, cannot be...
Design Example: Frog Muscle Response01:14

Design Example: Frog Muscle Response

A student is tasked to work on an intriguing experiment involving an RL (Resistor-Inductor) circuit to study the muscle response of a frog's leg to electrical stimulation. The RL circuit plays a crucial role in this experiment, providing the means to control and measure the electrical impulses that trigger muscle contraction.
When the switch connecting the RL circuit is closed, a brief muscle contraction is observed. This is because, at a steady state, the inductor acts like a short circuit,...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Photothermal-Assisted Solvent-Free Decontamination of a Nerve Agent Simulant Using UiO-66-NH<sub>2</sub>@CNT Hybrids.

Nanomaterials (Basel, Switzerland)·2026
Same author

Emergence of unconventional ferroelectric phase in ultrathin Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films.

Science advances·2026
Same author

Sub-Nanometer Ferroelectric Tunnel Junctions With Record-High on-Current Density Through Synergistic Microwave Annealing and High-Field Activation.

Small (Weinheim an der Bergstrasse, Germany)·2026
Same author

Bayesian estimation of pseudo Langmuir isotherm parameters in adsorption beds under time-varying inlet concentrations.

Journal of hazardous materials·2026
Same author

Enhancing Performance and Reliability of FeNAND Hybrid Memory via a 2D-WS<sub>2</sub> Layer for Charge Trapping and Ferroelectric Crystallization.

ACS applied materials & interfaces·2026
Same author

Development and application of a multimedia environmental model for assessing the behavior of chemical warfare agents.

Journal of hazardous materials·2025

Related Experiment Video

Updated: Jun 21, 2026

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

An electrically modifiable synapse array of resistive switching memory.

Hyejung Choi1, Heesoo Jung, Joonmyoung Lee

  • 1Department of Material Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, Korea.

Nanotechnology
|August 5, 2009
PubMed
Summary

This study presents a novel resistive switching cross-point memory device for neural networks. The device demonstrates analog memory characteristics and functions as a modifiable synapse array, paving the way for ultra-high density circuits.

More Related Videos

A Method for Growing Bio-memristors from Slime Mold
07:46

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

Related Experiment Videos

Last Updated: Jun 21, 2026

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

A Method for Growing Bio-memristors from Slime Mold
07:46

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

Area of Science:

  • Materials Science
  • Electrical Engineering
  • Computer Science

Background:

  • Resistive switching memory offers potential for high-density data storage.
  • Neural network hardware requires efficient and scalable synapse implementations.

Purpose of the Study:

  • To fabricate and characterize a cross-point cell array device for resistive switching.
  • To demonstrate the device's application as an electrically modifiable synapse array for neural network circuits.

Main Methods:

  • Fabrication of a 100 nm x 100 nm cross-point cell array using ultraviolet nanoimprinting.
  • Utilizing a GdO(x) and Cu-doped MoO(x) stack with platinum electrodes as the resistive switching layer.
  • Operating the cell array as a synapse array to perform weighted sum operations.

Main Results:

  • The device exhibited analog memory characteristics with a resistance ratio exceeding 10.
  • Successful demonstration of the cell array as a functional synapse array circuit.
  • The device shows promise for implementing electrically modifiable synaptic weights.

Conclusions:

  • The developed cross-point resistive switching memory is suitable for ultra-high density synapse circuits.
  • This technology enables feasible large-scale neural network systems.
  • The analog memory characteristics are crucial for efficient neural network computation.