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Updated: Jun 21, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Enhancement of spin lifetime in gate-fitted InGaAs narrow wires
Yoji Kunihashi1, Makoto Kohda, Junsaku Nitta
1Department of Materials Science, Tohoku University, Aramaki-Aza Aoba, Aoba-ku, Sendai 980-8579, Japan.
Abstract:
We investigated the spin lifetime in gate-fitted InGaAs narrow wires from magnetotransport measurement. Applying positive gate bias voltage, the spin lifetimes in narrow wires became more than one order longer than those obtained from a Hall bar sample with two-dimensional electron gas. This enhancement of spin lifetime in gated wires is the first experimental evidence of dimensional confinement and resonant spin-orbit interaction effect controlled by gate bias voltage. Spin relaxation due to the cubic Dresselhaus term is negligible in the present InGaAs wires.
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