Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Test of CP Symmetry in the Neutral Decays of Λ via J/ψ→ΛΛ[over ¯].

Physical review letters·2026
Same author

Precise Measurement of the Chromoelectric Dipole Moment of the Charm Quark.

Physical review letters·2026
Same author

Precise Measurement of Matter-Antimatter Asymmetry with Entangled Hyperon-Antihyperon Pairs.

Physical review letters·2026
Same author

[Application value and positioning of head-mounted displays in oral clinical practice].

Zhonghua kou qiang yi xue za zhi = Zhonghua kouqiang yixue zazhi = Chinese journal of stomatology·2026
Same author

Observation of Λ[over ¯]p→K^{+}π^{+}π^{-}π^{0} and Λ[over ¯]p→K^{+}π^{+}π^{-}2π^{0}.

Physical review letters·2026
Same author

First Measurement of the D_{s}^{+}→K^{0}μ^{+}ν_{μ} Decay.

Physical review letters·2026

Related Experiment Video

Updated: Jun 21, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

Two-qubit conditional phase gate in laser-excited semiconductor quantum dots using the quantum Zeno effect.

K J Xu1, Y P Huang, M G Moore

  • 1Department of Physics & Astronomy, Michigan State University, East Lansing, Michigan 48824, USA.

Physical Review Letters
|August 8, 2009
PubMed
Summary

We developed a quantum Zeno phase gate for semiconductor quantum dots. Surprisingly, increased phonon relaxation rates enhance gate fidelity by leveraging the Zeno effect for robust quantum operations.

More Related Videos

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
12:57

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Published on: October 13, 2017

Related Experiment Videos

Last Updated: Jun 21, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
12:57

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Published on: October 13, 2017

Area of Science:

  • Quantum computing
  • Solid-state physics
  • Quantum information science

Background:

  • Semiconductor quantum dots are promising qubits.
  • Quantum gates are essential for quantum computation.
  • Decoherence limits quantum gate performance.

Purpose of the Study:

  • To propose a novel two-qubit conditional quantum Zeno phase gate.
  • To investigate the role of phonon-assisted exciton relaxation.
  • To enhance quantum gate fidelity in semiconductor quantum dots.

Main Methods:

  • Analytical solution of the master equation.
  • Numerical simulation of system dynamics.
  • Utilizing a three-dot system (two charged, one neutral) driven by laser pulses.

Main Results:

  • The proposed scheme implements a conditional quantum Zeno phase gate.
  • Phonon-assisted exciton relaxation acts as environmental monitoring.
  • Increased phonon relaxation rates unexpectedly improve gate fidelity.

Conclusions:

  • The quantum Zeno effect can enhance quantum gate performance.
  • This scheme offers a robust method for two-qubit gates in quantum dots.
  • The findings contrast with conventional understanding of decoherence.