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Updated: Jun 21, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Vitor M Pereira1, A H Castro Neto
1Department of Physics, Boston University, Boston, Massachusetts 02215, USA.
Local strain in graphene can engineer electronic properties like confinement and 1D channels. This offers a pathway for creating all-graphene electronics integrated on a single sheet.
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