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Published on: December 7, 2017
Synthesis of InAs nanowires via a low-temperature solvothermal route
Xiangxing Xu1, Wei Wei, Xiaoming Qiu
1State Key Laboratory for Advanced Photonic Materials and Devices, Department of Optical Science and Engineering, Fudan University, Shanghai 200433, People's Republic of China.
Abstract:
InAs nanowires with diameters of 7-70 nm and lengths of up to several micrometres were synthesized by a new modified solvothermal method. The x-ray diffraction pattern showed that the InAs nanowires that were prepared had zinc blende and wurtzite structures. A combination of concentration-driven and ligand-aided solution-solid (LSS) growth mechanisms was used to explain the morphology evolution of the InAs nanowires. The preparation method features a low temperature (120-180 degrees C) and economical mass-production and is free of catalyst nanoparticles. It was believed that we have explored a promising path towards the synthesis of other morphology-controllable one-dimensional (1D) III-V group nano-materials. The structural stability of InAs nanowires during annealing was also studied.
