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Updated: Jun 21, 2026
A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
Piezoelectric PZT thick films on LaNiO(3) buffered stainless steel foils for flexible device applications
1NIH Transducer Resource Center and Department of Biomedical Engineering, University of Southern California, Los Angeles, CA 90089-1111, USA.
Abstract:
In this paper, we report on 4.5µm piezoelectric Pb(Zr(0.52)Ti(0.48))O(3) (PZT) thick films deposited on flexible stainless steel (SS) foils with LaNiO(3) (LNO) buffer layers using a ceramic powder/sol-gel solution modified composite method. The polycrystalline thick films show a hysteresis loop at an applied electric field of 900 kV cm(-1) with remanent polarization and coercive electric field values of 27µC cm(-2) and 85 kV cm(-1), respectively. At 1 kHz, the dielectric constant is 653 and the dielectric loss is 0.052. The leakage current density of the film is lower than 1.55 × 10(-5) Acm(-2) over the range of 0 to ±150V. The conduction current shows ohmic behaviour at a low electric field and space-charge-limited current characteristics at a high electric field.
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