Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Half wave rectifier01:20

Half wave rectifier

A half-wave rectifier is a fundamental circuit in electronics, designed to convert alternating current (AC) voltage into a unidirectional voltage. It utilizes the simplest form of diode rectification, where the circuit comprises a single diode in series with a load resistor and an AC power source.
Voltage Doubler Circuit01:23

Voltage Doubler Circuit

A voltage doubler circuit integrates two main components: a clamping section and a rectifier section. The clamping section consists of a capacitor (C1) and a diode (D1), whereas the rectifier section is equipped with another diode (D2) and capacitor (C2). This circuit produces an output voltage with twice the amplitude of the sinusoidal input voltage.
MOSFET Amplifiers01:17

MOSFET Amplifiers

The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
Full wave rectifier01:22

Full wave rectifier

A full-wave rectifier is a device that converts alternating current (AC) to direct current (DC) and is more efficient than its half-wave counterpart. It typically includes a center-tapped transformer, two diodes, and a load resistor. The secondary winding of the transformer is divided to provide two equal voltages of opposite polarities, which is the pivotal element of full-wave rectification.
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity arises...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Characteristics of Ti-diffused lithium niobate optical directional couplers.

Applied optics·2010
Same author

Wavelength-tunable actively mode-locked monolithic laser with an integrated vertical coupler filter.

Optics letters·2009
Same author

Ti:LiNbO(3) waveguide electro-optic beam combiner.

Optics letters·2009
Same author

Low-cross-talk waveguide polarization multiplexer/demultiplexer for lambda = 1.32 microm.

Optics letters·2009
Same author

High-speed waveguide electro-optic polarization modulator.

Optics letters·2009
Same author

Optical guided-wave devices.

Science (New York, N.Y.)·1986

Related Experiment Video

Updated: Jun 20, 2026

Characterization of Anisotropic Leaky Mode Modulators for Holovideo
09:36

Characterization of Anisotropic Leaky Mode Modulators for Holovideo

Published on: March 19, 2016

Electro-optic waveguide TE <--> TM mode converter with low drive voltage.

R C Alferness1, L L Buhl

  • 1Bell Laboratories, Holmdel, New Jersey 07733, USA.

Optics Letters
|August 25, 2009
PubMed
Summary
This summary is machine-generated.

We achieved efficient electro-optic mode conversion in lithium niobate waveguides using only 2.5-V drive. This wavelength-dependent technique enables potential applications in optical wavelength multiplexing and demultiplexing.

More Related Videos

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

Microwave Photonics Systems Based on Whispering-gallery-mode Resonators
12:18

Microwave Photonics Systems Based on Whispering-gallery-mode Resonators

Published on: August 5, 2013

Related Experiment Videos

Last Updated: Jun 20, 2026

Characterization of Anisotropic Leaky Mode Modulators for Holovideo
09:36

Characterization of Anisotropic Leaky Mode Modulators for Holovideo

Published on: March 19, 2016

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

Microwave Photonics Systems Based on Whispering-gallery-mode Resonators
12:18

Microwave Photonics Systems Based on Whispering-gallery-mode Resonators

Published on: August 5, 2013

Area of Science:

  • Photonics and Optical Engineering
  • Materials Science

Background:

  • Lithium niobate is a key material for electro-optic devices.
  • Efficient TE <--> TM mode conversion is crucial for optical signal processing.
  • Wavelength dependency of mode conversion in birefringent materials presents challenges and opportunities.

Purpose of the Study:

  • To demonstrate complete electro-optic TE <--> TM mode conversion in Ti-diffused lithium niobate waveguides.
  • To explore the potential of this method for wavelength multiplexing and demultiplexing applications.
  • To fabricate independently controlled mode converters on a single substrate.

Main Methods:

  • Utilizing Ti-diffused lithium niobate waveguides.
  • Applying an electro-optic drive voltage as low as 2.5-V.
  • Fabricating three independently controlled mode converters with specific filter bandwidths and center wavelength separations.

Main Results:

  • Achieved complete electro-optic TE <--> TM mode conversion.
  • Demonstrated operation with a low drive voltage of 2.5-V.
  • Successfully fabricated three independently controlled mode converters with 15-Å filter bandwidth and 80-Å center wavelength separation.

Conclusions:

  • The demonstrated electro-optic mode conversion is highly efficient.
  • The wavelength-dependent nature of the conversion is suitable for wavelength multiplexing/demultiplexing.
  • The fabrication of multiple independently controlled converters on a single substrate shows promise for integrated photonic devices.