Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Experiment Video

Updated: Jun 20, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

Alignment of semiconductor nanowires using ion beams.

Christian Borschel1, Raphael Niepelt, Sebastian Geburt

  • 1Institute for Solid State Physics, University of Jena, Max-Wien-Platz 1, 07743 Jena, Germany. christian.borschel@uni-jena.de

Small (Weinheim an Der Bergstrasse, Germany)
|August 29, 2009
PubMed
Summary

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Far-Field Directionality Control of Coupled InP Nanowire Lasers.

Nano letters·2025
Same author

Enhancement and quenching of ZnO nanowire luminescence by electron irradiation.

Discover nano·2025
Same author

Influence of mode polarization on the emission dynamics of zinc-oxide nanowire lasers coupled to planar aluminum substrates.

Optics letters·2025
Same author

Solid-State Laser Annealing (SLA) of Fully Solution-Processed Amorphous InZnO Thin-Film Transistors at Various Fluence.

ACS omega·2025
Same author

Tracing the Formation of Femtosecond Laser-Induced Periodic Surface Structures (LIPSS) by Implanted Markers.

ACS applied materials & interfaces·2024
Same author

Tuning carrier density and phase transitions in oxide semiconductors using focused ion beams.

Nanophotonics (Berlin, Germany)·2024

Gallium arsenide nanowires bend due to ion irradiation. Defect formation, including vacancies and interstitials, drives this bending, which can be upwards or downwards depending on ion type and energy.

Area of Science:

  • Materials Science
  • Nanotechnology
  • Physics

Background:

  • Gallium arsenide (GaAs) nanowires are crucial in semiconductor research.
  • Understanding their response to ion irradiation is key for device applications.
  • Epitaxial growth leads to nanowires oriented at an angle to the substrate.

Purpose of the Study:

  • To investigate the bending behavior of GaAs nanowires under energetic ion irradiation.
  • To identify the underlying mechanisms responsible for nanowire bending.
  • To correlate bending with ion fluence, species, and energy.

Main Methods:

  • Growth of GaAs nanowires on GaAs substrates.
  • Irradiation of nanowires with various energetic ions.
  • Analysis of nanowire bending (upwards/downwards) and alignment.

More Related Videos

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
09:20

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

Published on: December 7, 2015

Analysis of Contact Interfaces for Single GaN Nanowire Devices
11:13

Analysis of Contact Interfaces for Single GaN Nanowire Devices

Published on: November 15, 2013

Related Experiment Videos

Last Updated: Jun 20, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
09:20

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

Published on: December 7, 2015

Analysis of Contact Interfaces for Single GaN Nanowire Devices
11:13

Analysis of Contact Interfaces for Single GaN Nanowire Devices

Published on: November 15, 2013

  • Monte Carlo simulations of ion implantation cascades.

    • Main Results:

    • Nanowire bending (downwards or upwards) increases with ion fluence.
    • Upwards bending allows nanowire alignment towards the ion beam at high fluences.
    • Defect formation (vacancies, interstitials) is the primary cause of bending.
    • Simulation results support the experimental observations.

    Conclusions:

    • Energetic ion irradiation induces significant bending in GaAs nanowires.
    • Defect generation within implantation cascades is the dominant mechanism governing bending.
    • Ion species, energy, and fluence are critical parameters controlling bending direction and magnitude.