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Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

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Passive mode locking of a semiconductor diode laser.

Y Silberberg, P W Smith, D J Eilenberger

|September 2, 2009

Summary

Researchers achieved 1.6 picosecond pulses from a passively mode-locked diode laser using a GaAs/GaAIAs multiple-quantum-well saturable absorber. This represents the shortest pulse duration recorded for a mode-locked diode laser in a regular pulse train.

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Area of Science:

Optoelectronics
Semiconductor Lasers
Quantum Well Physics

Background:

Mode-locked diode lasers are crucial for applications requiring ultrashort optical pulses.
Achieving shorter pulse durations is a key goal in laser technology.
Gallium Arsenide (GaAs) and Gallium Aluminum Arsenide (GaAlAs) quantum wells offer unique optical properties.

Purpose of the Study:

To passively mode-lock a GaAs laser using a novel saturable absorber.
To investigate the potential of GaAs/GaAIAs multiple-quantum-well structures for generating ultrashort laser pulses.
To achieve record-breaking pulse durations from a mode-locked diode laser.

Main Methods:

Utilized a GaAs/GaAIAs multiple-quantum-well (MQW) sample as a saturable absorber.
Integrated the MQW saturable absorber into an external resonator configuration.
Employed passive mode-locking techniques to generate ultrashort optical pulses from a GaAs laser.

Main Results:

Successfully achieved passive mode-locking of a GaAs laser.
Generated optical pulses with a duration as short as 1.6 picoseconds (psec).
Observed a regular pulse train with unprecedented short pulse durations for this type of laser.

Conclusions:

GaAs/GaAIAs multiple-quantum-well saturable absorbers are highly effective for passive mode-locking of diode lasers.
This method enables the generation of record-short pulses from mode-locked diode lasers.
The achieved pulse durations open possibilities for advanced optical applications.