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Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Ferromagnetic GaAs/GaMnAs core-shell nanowires grown by molecular beam epitaxy

Andreas Rudolph1, Marcello Soda, Matthias Kiessling

  • 1Institute for Experimental and Applied Physics, University of Regensburg, Universitatsstrasse 31, D-93053 Regensburg, Germany.

Nano Letters
|September 8, 2009
PubMed

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