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Related Experiment Video

Updated: Jun 20, 2026

Electrochemical Etching and Characterization of Sharp Field Emission Points for Electron Impact Ionization

Electrochemical Etching and Characterization of Sharp Field Emission Points for Electron Impact Ionization

Published on: July 12, 2016

Space charge effects in field emission nanodevices.

P Y Chen¹, T C Cheng, J H Tsai

¹Sky-watcher Telescope and Optics Corp., Richmond, British Columbia V7A5C8, Canada. pychen@gmail.com

|September 10, 2009

Summary

Space charge significantly impacts electron field emission in nanoelectronic devices at high current densities. This study analyzes its effects on diode and triode structures, revealing a link between current limitation and electric field distribution.

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Area of Science:

Physics
Materials Science
Nanotechnology

Background:

Electron field emission (FE) is a quantum mechanical process governed by the Fowler-Nordheim (FN) equation.
At high current densities, space charge effects can alter the predicted current density-voltage (J-V) characteristics.

Purpose of the Study:

To theoretically investigate the influence of space charge on field emission in nanodiode and nanotriode structures.
To analyze how geometry, dimensions, and material work functions affect space charge limitations.

Main Methods:

Solving the coupled Fowler-Nordheim and Poisson's equations.
Analytical solutions for diode structures and numerical solutions for triode structures.
Investigating various device geometries, dimensions, and emitter work functions.

Main Results:

Space charge plays a critical role in high current density field emission nanodevices.
The threshold current density for space-charge limitation is dependent on electric field distributions.
Theoretical predictions align well with previously reported experimental findings.

Conclusions:

Space charge is a key factor influencing the performance of field emission nanodevices, particularly at high current densities.
Understanding these effects is crucial for designing and optimizing nanodevices for specific applications.