Related Experiment Video
Updated: Jun 20, 2026
15:47
Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Continuous-wave operation of extremely low-threshold GaAs/AlGaAs broad-area injection lasers on (100) Si substrates
Optics Letters
|September 11, 2009
Abstract:
Room-temperature continuous-wave operation of large-area (120 microm x 980 microm) GaAs/AlGaAs graded-refractive-index separate-confinement heterostructure lasers on (100) Si substrates has been obtained. Minimum threshold-current densities of 214 A/cm(2) (1900-microm cavity length), maximum slope efficiencies of about 0.8 W/A (600-microm cavity length), and optical power in excess of 270 mW/facet 900-microm cavity length) have been observed under pulsed conditions.
