Jove
Visualize
Contact Us

Related Concept Videos

Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Measured backscatter signature of a fiber recirculating delay line.

Applied optics·2010
Same author

Multiple-pass Raman gain cell.

Applied optics·2010
Same author

Reduced sidelobe integrated acousto-optic filter with birefringence apodization.

Optics letters·2009
Same author

Anomalous sidelobes and birefringence apodization in acousto-optic tunable filters.

Optics letters·2009
Same author

Two-piece, piezoelectrically tuned, single-mode Nd:YAG ring laser.

Optics letters·2009
Same author

Alignment-stabilized grating-tuned external-cavity semiconductor laser.

Optics letters·2009
Same journal

Gaussian-modulated continuous-variable quantum key distribution over 60 km fiber using an integrated silicon photonic receiver.

Optics letters·2026
Same journal

E2E-OCT: end-to-end joint learning model using optical coherence tomography images for vocal cord leukoplakia diagnosis.

Optics letters·2026
Same journal

Holographic generation of panoramic 3D scenes by concave ellipsoidal mirror reflection.

Optics letters·2026
Same journal

Dual-pilot phase recovery with pair-wise maximum-ratio combining for coherent PONs.

Optics letters·2026
Same journal

Mapping the whispering gallery modes of a CaF<sub>2</sub> disk resonator with half-tapered fibers to estimate the fundamental mode volume.

Optics letters·2026
Same journal

Quantitative estimation of deep-subwavelength scale via dark-field scattering axial energy concentration decay profiles.

Optics letters·2026
See all related articles
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Experiment Video

Updated: Jun 20, 2026

Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters
15:25

Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters

Published on: February 4, 2018

Interference-filter-tuned, alignment-stabilized, semiconductor external-cavity laser.

P Zorabedian, W R Trutna

    Optics Letters
    |September 12, 2009
    PubMed
    Summary
    This summary is machine-generated.

    A new interference-filter-tuned semiconductor laser offers 260x better alignment tolerance than grating-tuned lasers, with a similar tuning range. This advance improves laser stability and performance for optical applications.

    More Related Videos

    Construction and Characterization of External Cavity Diode Lasers for Atomic Physics
    09:10

    Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

    Published on: April 24, 2014

    Cooling an Optically Trapped Ultracold Fermi Gas by Periodical Driving
    11:21

    Cooling an Optically Trapped Ultracold Fermi Gas by Periodical Driving

    Published on: March 30, 2017

    Related Experiment Videos

    Last Updated: Jun 20, 2026

    Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters
    15:25

    Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters

    Published on: February 4, 2018

    Construction and Characterization of External Cavity Diode Lasers for Atomic Physics
    09:10

    Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

    Published on: April 24, 2014

    Cooling an Optically Trapped Ultracold Fermi Gas by Periodical Driving
    11:21

    Cooling an Optically Trapped Ultracold Fermi Gas by Periodical Driving

    Published on: March 30, 2017

    Area of Science:

    • Optics and Photonics
    • Semiconductor Lasers
    • Laser Engineering

    Background:

    • External-cavity semiconductor lasers are crucial for tunable light sources.
    • Conventional grating-tuned lasers face limitations in alignment stability.
    • Interference filters offer a potential alternative for laser tuning.

    Purpose of the Study:

    • To compare the angular alignment tolerance and tuning range of a novel interference-filter-tuned semiconductor external-cavity laser (IF-SEC) with a conventional grating-tuned external-cavity laser (GT-EC).
    • To evaluate the performance of an InGaAsP Fabry-Perot laser as a gain medium in both laser configurations.

    Main Methods:

    • A degenerate resonator design was employed for the novel IF-SEC laser.
    • A 1300-nm InGaAsP Fabry-Perot laser with an antireflection-coated facet served as the gain medium.
    • Angular alignment tolerance and tuning range were experimentally measured and compared between the two laser types.

    Main Results:

    • The IF-SEC laser demonstrated a 260-fold greater angular alignment tolerance (+/-26 mrad) compared to the GT-EC laser (+/-0.1 mrad).
    • The tuning range of the IF-SEC laser (90 nm) was comparable to that of the GT-EC laser (110 nm).

    Conclusions:

    • The novel interference-filter-tuned semiconductor external-cavity laser offers significantly improved alignment stability over traditional grating-tuned designs.
    • This enhanced stability, coupled with a comparable tuning range, makes the IF-SEC laser a promising candidate for applications requiring robust and tunable laser sources.