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Updated: Jun 20, 2026

Fabrication And Characterization Of Photonic Crystal Slow Light Waveguides And Cavities
Published on: November 30, 2012
Losses in semiconductor waveguide S bends fabricated by impurity-induced layer disordering
Abstract:
An experimental comparison is made between the losses of S bends fabricated by impurity-induced layer disordering in GaAs-AlAs superlattices. For parallel waveguides offset by 100 microm, transition lengths corresponding to 3-dB excess loss were found to be approximately 290 microm for approximately single-mode S bends in the form of a raised cosine and approximately 335 microm for bends in the form of two constant-radius-of-curvature sections. These buried-channel bends appear to have losses that compare favorably with those formed from rib waveguides.
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