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Fabrication And Characterization Of Photonic Crystal Slow Light Waveguides And Cavities

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Losses in semiconductor waveguide S bends fabricated by impurity-induced layer disordering.

T K Tang, P D Swanson, M E Givens

|September 12, 2009

Summary

Researchers experimentally compared S bend losses in GaAs-AlAs superlattices. Impurity-induced layer disordering created buried-channel bends with favorable loss, comparable to rib waveguides.

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Area of Science:

Semiconductor physics
Optoelectronics
Materials science

Background:

Gallium arsenide-aluminum arsenide (GaAs-AlAs) superlattices are crucial for optoelectronic devices.
Waveguide design impacts signal loss in integrated photonic circuits.
Impurity-induced layer disordering is a method for fabricating buried waveguides.

Purpose of the Study:

To experimentally compare the optical losses of S bends fabricated using impurity-induced layer disordering in GaAs-AlAs superlattices.
To evaluate the performance of different S bend geometries (raised cosine vs. constant radius).

Main Methods:

Fabrication of S bends in GaAs-AlAs superlattices via impurity-induced layer disordering.
Experimental measurement of excess loss in single-mode S bends with varying geometries.
Comparison of transition lengths for a 3-dB excess loss threshold.

Main Results:

Transition lengths for a 3-dB excess loss were approximately 290 microm for raised cosine S bends and 335 microm for constant-radius S bends.
The fabricated buried-channel S bends exhibited favorable loss characteristics.
Losses were found to compare favorably with those of S bends formed from rib waveguides.

Conclusions:

Impurity-induced layer disordering is an effective technique for fabricating low-loss S bends in GaAs-AlAs superlattices.
The raised cosine S bend geometry offers slightly lower transition loss compared to constant-radius designs.
These buried-channel bends present a viable alternative to rib waveguides for integrated photonic applications.