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Related Experiment Video

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Solid-state XeF(D ? X) laser at 286 nm.

A I Katz, J Feld, V A Apkarian

    Optics Letters
    |September 15, 2009
    PubMed
    Summary
    This summary is machine-generated.

    Xenon fluoride (XeF)-doped argon (Ar) crystals exhibit stimulated emission at 286 nm. These crystals achieved a net gain exceeding 6 cm(-1) when pumped at 248 nm.

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    Area of Science:

    • Laser physics
    • Solid-state materials
    • Spectroscopy

    Background:

    • Rare-gas-halide excimers are crucial for laser applications.
    • Solid-state laser gain media offer advantages over gas lasers.
    • Investigating XeF in Ar matrices explores new solid-state laser possibilities.

    Purpose of the Study:

    • To investigate stimulated emission in XeF-doped Ar crystals.
    • To determine the gain characteristics of this novel gain medium.
    • To assess the potential for ultraviolet (UV) laser development.

    Main Methods:

    • XeF-doped Ar crystals were synthesized.
    • The crystals were optically pumped using a 248 nm laser.
    • Stimulated emission spectra were recorded, and spectral narrowing was analyzed.

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    Main Results:

    • Stimulated emission was observed on the XeF D-X band, with emission centered at 286 nm.
    • Spectral narrowing measurements confirmed significant gain.
    • A net gain exceeding 6 cm(-1) was measured, indicating efficient energy conversion.

    Conclusions:

    • XeF-doped Ar crystals demonstrate promising gain characteristics for UV laser applications.
    • The observed stimulated emission supports their potential as a solid-state laser gain medium.
    • Further research could optimize these crystals for high-performance laser devices.