Picosecond photorefractive response of GaAs:EL2, InP:Fe, and CdTe:V

Measurements and theoretical calculations are presented for the photorefractive effect in three semi-insulating semiconductors (GaAs:EL2, InP:Fe, and CdTe:V) using 29-psec pulses at a wavelength of 1.06 microm. The photorefractive gain is largest in the CdTe crystal and smallest in our InP sample. The major differences between the materials responsible for this are the electro-optic coefficients, the mobilities, the absorption coefficients, and the amount of electron-hole competition.