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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...

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Fabrication And Characterization Of Photonic Crystal Slow Light Waveguides And Cavities
11:08

Fabrication And Characterization Of Photonic Crystal Slow Light Waveguides And Cavities

Published on: November 30, 2012

Highly efficient crossing structure for silicon-on-insulator waveguides.

Pablo Sanchis1, Pablo Villalba, Francisco Cuesta

  • 1Valencia Nanophotonics Technology Center, Universidad Politécnica de Valencia, Camino de Vera, s/n,46022, Valencia, Spain. pabsanki@ntc.upv.es

Optics Letters
|September 17, 2009
PubMed
Summary
This summary is machine-generated.

This study presents a compact silicon-on-insulator waveguide crossing with minimal signal loss and crosstalk. Optimized using a genetic algorithm, it offers efficient light routing for integrated photonic circuits.

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Area of Science:

  • Photonics and Optical Engineering
  • Integrated Optics
  • Nanofabrication

Background:

  • Waveguide crossings are essential components in integrated photonic circuits.
  • Minimizing insertion loss and crosstalk is critical for device performance.
  • Silicon-on-insulator (SOI) technology offers a robust platform for photonic integration.

Purpose of the Study:

  • To design and demonstrate a compact waveguide crossing structure for SOI circuits.
  • To achieve low transmission losses and negligible crosstalk.
  • To optimize the structure using advanced computational methods.

Main Methods:

  • Utilized a mode expander design for the waveguide crossing.
  • Employed a genetic algorithm for optimizing the mode expander.
  • Fabricated the structure on a silicon-on-insulator platform.

Main Results:

  • Achieved transmission losses below 0.2 dB.
  • Exhibited crosstalk and reflection losses below 40 dB.
  • Demonstrated performance over a broad bandwidth of 20 nm.
  • Resulting structure has a compact footprint of 6x6 micrometers squared.
  • No additional fabrication steps were required.

Conclusions:

  • The demonstrated waveguide crossing structure is highly efficient for SOI circuits.
  • The genetic algorithm optimization successfully minimized losses and crosstalk.
  • The compact size and standard fabrication make it suitable for large-scale integration.