Related Experiment Video
Updated: Jun 20, 2026

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics
Published on: April 24, 2014
High-accuracy picosecond characterization of gain-switched laser diodes
Abstract:
A unique combination of the time-correlated photon-counting technique and single-photon avalanche diode detectors gives an accurate characterization of gain-switched semiconductor lasers with picosecond resolution. The high sensitivity and the clean shape of the time response reveal even small features (reflections and relaxation oscillations), making a true optimization of the laser-diode operation possible. The technique outperforms the standard characterization with ultrafast p-i-n photodiodes and a sampling oscilloscope. In addition, compared with other methods, it has favorable features that greatly simplify the measurement.
Related Concept Videos
Modeling of Diode Forward Characteristics
Modeling of Diode Reverse Characteristics
When a reverse voltage applied to a Zener diode exceeds its breakdown voltage, the diode enters the breakdown region. At this point, the...
Small-signal Diode Model

