Model for resonant intensity dependence of photorefractive two-wave mixing in InP:Fe

We present a new model, which incorporates both temperature and electron-hole effects, for two-beam coupling in photorefractive semiconductors under an external dc field E(0). We show that the exponential gain ? exhibits an intensity-dependent resonance. The application of this model to InP:Fe allows us to predict a value of ? near 20 cm(-1) for a thin sample at 1.06 microm with E(0) = 10 kV/cm.