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IR Absorption Frequency: Hybridization

IR Absorption Frequency: Hybridization

Hydrocarbons such as alkanes, alkenes, and alkynes show characteristic C–H stretching absorption bands. These IR stretching frequencies depend on the hybridization of the involved carbon atom and can be explained in terms of the s character of each hybridized atomic orbital.
Among the sp, sp2, and sp3 hybridized orbitals, sp orbitals have the maximum s character (50%). Consequently, the electrons are held more closely to the nucleus, resulting in stronger and shorter C–H bonds that stretch at a...

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Nonlinear-optical absorption in InGaAs/InAlAs multiple quantum wells.

D A Mace, M A Fisher, M G Burt

|September 18, 2009

Summary

This summary is machine-generated.

We measured optical transmission in an InGaAs/InAlAs multiple-quantum-well structure. High light intensity saturates absorption, revealing a carrier lifetime of 0.75 nanoseconds.

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Area of Science:

Optoelectronics
Semiconductor Physics
Materials Science

Background:

In(0.53)Ga(0.47)As/In(0.52)Al(0.48)As multiple-quantum-well (MQW) structures are crucial for optoelectronic devices.
Understanding their optical properties under high light intensity is essential for device performance and design.

Purpose of the Study:

To investigate the room-temperature intensity-dependent optical transmission of an InGaAs/InAlAs MQW structure.
To determine the absorption saturation behavior and carrier lifetime within the material.

Main Methods:

Optical transmission measurements were performed on an InGaAs/InAlAs MQW structure across a wavelength range of 1.5 to 1.7 micrometers.
Absorption was calculated from transmission data, accounting for wavelength-dependent reflection coefficients.
A theoretical model was developed to fit the intensity-dependent absorption data.

Main Results:

A light intensity of 15 kW cm(-2) was found to halve the absorption at the 1H-1C transition edge.
Complete absorption saturation was observed at intensities exceeding 10(7) W cm(-2).
The theoretical model accurately fitted the absorption intensity dependence up to saturation.

Conclusions:

The study quantifies the optical absorption saturation in InGaAs/InAlAs MQWs under high light intensities.
A carrier lifetime of 0.75 nanoseconds was predicted by the model and experimentally validated.