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Updated: Jun 20, 2026
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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
Optical waveguiding in a single-crystal layer of germanium silicon grown on silicon
Optics Letters
|September 18, 2009
Abstract:
Low-loss waveguiding at lambda = 1.3 microm has been observed in a partially strained, 10-microm-thick, single-crystal layer of Ge(0.1)Si(0.9) grown by chemical-vapor deposition upon an intrinsic (100) silicon substrate. The TM-mode propagation loss in the multimode planar guide was 1.9 dB/cm.
