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Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

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Published on: October 13, 2017

Low density InAs/(In)GaAs quantum dots emitting at long wavelengths.

G Trevisi¹, L Seravalli, P Frigeri

¹CNR-IMEM, Parco delle Scienze 37a, I-43100 Parma, Italy.

|September 19, 2009

Summary

We optimized Indium Arsenide/(Indium Gallium Arsenide) quantum dot structures for long-wavelength single-photon sources. Careful control of growth parameters and confining layer composition achieved low densities and specific emission properties.

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Area of Science:

Materials Science
Quantum Optics
Semiconductor Physics

Background:

Quantum dots (QDs) are crucial for advanced photonic devices.
Achieving long-wavelength emission from InAs QDs is challenging.
Controlling QD density and optical properties is key for single-photon applications.

Purpose of the Study:

To optimize molecular beam epitaxy (MBE) growth of InAs/(In)GaAs QDs.
To investigate the impact of growth parameters on QD properties.
To achieve single-photon emission at long wavelengths.

Main Methods:

Molecular beam epitaxy (MBE) growth of InAs/(In)GaAs structures.
Systematic variation of QD growth rate, temperature, and coverage.
Tuning of InGaAs upper confining layer thickness and composition.
Optical and morphological characterization of the quantum dot structures.

Main Results:

Low growth rate, high temperature, and reduced coverage decrease QD density.
Indium Gallium Arsenide (InGaAs) upper layers redshift emission without altering QD density.
Optimized structures achieved densities in the 10^9 cm^-2 range.
Observed emission at 1.33 micrometers with a Full Width at Half Maximum (FWHM) of 22 meV at 10 K.

Conclusions:

MBE growth parameters significantly influence QD density and emission wavelength.
InGaAs confining layers are effective for tuning emission to longer wavelengths.
The study successfully produced InAs/(In)GaAs QD structures suitable for long-wavelength single-photon emission.