Related Experiment Video
Updated: Jun 20, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Electrodeposition of copper tetracyanoquinodimethane for bipolar resistive switching non-volatile memories
Robert Müller1, Olivier Rouault, Aaron Katzenmeyer
1IMEC v.z.w., Kapeldreef 75, 3001 Leuven, Belgium. robert.muller@imec.be
Abstract:
Electrodeposition experiments of the charge-transfer complex copper tetracyanoquinodimethane (CuTCNQ) (where TCNQ denotes 7,7',8,8'-tetracyanoquinodimethane) on noble metal electrodes (M=Pt and Au) were optimized in order to produce suitable layers for bipolar resistive switching cross-bar M/CuTCNQ/Al memory cells. Corresponding memories exhibited up to more than 10 000 consecutive write/erase cycles, with very stable on and off reading currents and an on/off current ratio of 10. CuTCNQ electrodeposition techniques were furthermore optimized for growing the material in 250 nm diameter contact holes of complementary metal oxide semiconductor dies with tungsten bottom contacts.
More Related Videos
Related Concept Videos
Electrodeposition
Electrodeposition can...
Types of Reversible Electrodes
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Bipolar Junction Transistor
The structure...

