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Updated: Jun 20, 2026

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment
Published on: November 9, 2015
Transient 210-nm absorption in fused silica induced by high-power UV laser irradiation
Abstract:
Synthetic fused silica, exposed to high-power KrF excimer laser irradiation, shows the well-known induced absorption at 210 nm owing to E' center generation. Time-resolved absorption spectroscopy reveals that this induced absorption is transient in nature. The generation rate of E' centers depends strongly on the irradiation history, the OH content, and previous high-temperature processes. In order to explain the experimental observations, a nonabsorbing state of theE' center is postulated. The recovery of the induced optical absorption in high-OH fused silica is explained as a conversion from E' centers to these nonabsorbing centers.
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