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Ion-implanted Nd:GGG channel waveguide laser.

S J Field, D C Hanna, A C Large

|September 29, 2009

Summary

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Researchers fabricated and operated the first ion-implanted Neodymium-doped Gadolinium Gallium Garnet (Nd:GGG) channel waveguides. This breakthrough achieved low-threshold diode-pumped laser operation with high efficiency.

Area of Science:

Optics and Photonics
Materials Science
Laser Technology

Background:

Neodymium-doped Gadolinium Gallium Garnet (Nd:GGG) is a promising material for laser applications.
Channel waveguides offer miniaturization and enhanced light confinement for integrated optics.

Purpose of the Study:

To report the first fabrication of ion-implanted Nd:GGG channel waveguides.
To demonstrate laser operation in these novel waveguides.

Main Methods:

Ion implantation was used to create Nd:GGG channel waveguides.
Diode-pumping was employed to achieve laser operation.

Main Results:

Successful fabrication and laser operation of ion-implanted Nd:GGG channel waveguides were achieved.

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Low absorbed power thresholds of approximately 2 mW were demonstrated.

A slope efficiency of approximately 30% with respect to absorbed power was obtained.

Conclusions:

Ion-implanted Nd:GGG channel waveguides represent a new platform for integrated photonics.
The demonstrated performance indicates potential for efficient, compact laser devices.