Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Switching of BJT01:22

Switching of BJT

Switching behavior in Bipolar Junction Transistors (BJTs) is a fundamental aspect utilized in various electronic circuits, particularly for digital logic applications like switches and amplifiers. In a typical switching circuit, a BJT alternates between cut-off and saturation modes, corresponding to the "off" and "on" states, respectively, thus behaving like an ideal switch.
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are reverse-biased. The...
Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Bipolar Junction Transistor01:22

Bipolar Junction Transistor

Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational characteristics.
The structure...
Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
Schottky Barrier Diode01:27

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Prevention of aggression in psychiatric patients in five psychiatric hospitals in China: a best practice implementation project.

JBI evidence implementation·2026
Same author

Heterogeneous Demand-Aware Multi-Agent Communication Based on Role Representation.

IEEE transactions on neural networks and learning systems·2026
Same author

Morphology-Engineered Pd-SnO<sub>2</sub> Porous Networks for Enhanced Hydrogen Detection.

ACS sensors·2026
Same author

A-Site Cation Functional Engineering Enables Lead-free Perovskite Photosynapse for Neuromorphic Visual Computing.

ACS applied materials & interfaces·2026
Same author

Common auricular acupoint patterns for postoperative recovery across laparoscopic surgeries: a data mining-based systematic analysis.

Frontiers in medicine·2026
Same author

Enhancing the reverse osmosis desalination performance of thin-film nanocomposite membranes by incorporating tannic acid-modified graphitic carbon nitride nanosheets.

Nanoscale·2026
Same journal

Compressed multi-scale entropy and its application in mechanical fault diagnosis.

The Review of scientific instruments·2026
Same journal

Bidirectional drive and multi-resolution adjustment across frequency bands in inertial impact piezoelectric motors via multimodal resonant vibration.

The Review of scientific instruments·2026
Same journal

A magnetic field sensor based on flaky Terfenol-D material and dual fiber grating.

The Review of scientific instruments·2026
Same journal

A novel E-field eight-way cavity combiner for high-power S-band applications.

The Review of scientific instruments·2026
Same journal

Constant radius blade spring suspended bench for vibration isolation.

The Review of scientific instruments·2026
Same journal

Qualification of infrared optical fibers and emitters for a spectrometer for in situ planetary exploration: Results from the TRIS (TRansmission and Illumination System) project.

The Review of scientific instruments·2026
See all related articles

Related Experiment Video

Updated: Jun 19, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

All-solid-state repetitive semiconductor opening switch-based short pulse generator.

Zhenjie Ding1, Qingsong Hao, Long Hu

  • 1Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China. dingfamily@163.com

The Review of Scientific Instruments
|October 2, 2009
PubMed
Summary
This summary is machine-generated.

A novel semiconductor opening switch (SOS) generator produces 120 kV, 5-6 ns pulses at 1 kHz. This all-solid-state device utilizes magnetic pulse compression for efficient high-voltage, short-pulse generation.

More Related Videos

Rapid Repetition Rate Fluctuation Measurement of Soliton Crystals in a Microresonator
07:42

Rapid Repetition Rate Fluctuation Measurement of Soliton Crystals in a Microresonator

Published on: December 15, 2021

20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier
10:17

20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier

Published on: July 12, 2017

Related Experiment Videos

Last Updated: Jun 19, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Rapid Repetition Rate Fluctuation Measurement of Soliton Crystals in a Microresonator
07:42

Rapid Repetition Rate Fluctuation Measurement of Soliton Crystals in a Microresonator

Published on: December 15, 2021

20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier
10:17

20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier

Published on: July 12, 2017

Area of Science:

  • Electrical Engineering
  • Pulsed Power Systems
  • Semiconductor Devices

Background:

  • Semiconductor Opening Switches (SOS) are critical for pulsed power applications.
  • Optimizing pumping circuit parameters is key to SOS performance.
  • Short pulse generation requires advanced switching and compression techniques.

Purpose of the Study:

  • To design and construct a high-performance, all-solid-state repetitive short pulse generator (SPG100) based on SOS technology.
  • To investigate the impact of magnetic pulse compression on pulse generation characteristics.
  • To achieve high voltage and nanosecond-level pulse durations.

Main Methods:

  • Utilized a three-level magnetic pulse compression unit with metallic glass and ferrite cores.
  • Employed a semiconductor opening switch (SOS) for current interruption.
  • Compressed a primary pulse to generate high-current forward and reverse pumping currents for the SOS.
  • Characterized the output pulse parameters, including voltage, duration, and repetition rate.

Main Results:

  • Successfully constructed an all-solid-state repetitive SOS-based short pulse generator (SPG100).
  • Achieved output pulses of 120 kV with a duration of 5-6 ns across a 125 Omega load.
  • Demonstrated a maximum repetition rate of up to 1 kHz.
  • The generator compresses a 600 V, 10 mus pulse into nanosecond pulses with specific forward and reverse pumping currents.

Conclusions:

  • The developed SPG100 demonstrates effective short pulse generation using SOS and magnetic pulse compression.
  • The device is capable of producing high-voltage, nanosecond pulses at a high repetition rate.
  • This technology holds promise for various pulsed power applications requiring precise and powerful short pulses.