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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Transport properties of graphene in the high-current limit

Amelia Barreiro1, Michele Lazzeri, Joel Moser

  • 1CIN2(CSIC-ICN), Campus UAB, Barcelona E-08193, Spain.

Physical Review Letters
|October 2, 2009
PubMed

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