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Multiple- and single-shot autocorrelator based on two-photon conductivity in semiconductors
Optics Letters
|October 2, 2009
Summary
Two-photon conductivity in silicon and semiconductor devices enables ultrashort optical pulse measurements. This method offers a simple, fast, and cost-effective approach for optical pulse characterization.
Area of Science:
- Optoelectronics
- Nonlinear Optics
- Semiconductor Physics
Background:
- Ultrashort optical pulse measurement is crucial for various scientific and technological applications.
- Traditional methods for pulse measurement can be complex and expensive.
Purpose of the Study:
- To investigate and apply two-photon-induced conductivity for ultrashort optical pulse measurements.
- To demonstrate a simplified and cost-effective measurement technique.
Main Methods:
- Observed two-photon-induced conductivity in Silicon (Si), Gallium Arsenide Phosphide (GaAsP) photodiodes, and Cadmium Sulfide (CdS) photo-conductive cells.
- Utilized a simplified Michelson-type interferometer arrangement.
- Employed a two-dimensional Silicon Charge-Coupled Device (CCD) array for single-shot pulse-width measurements.
Main Results:
- Achieved two-photon conductivity with an efficiency of 3 x 10^-14 A/W (where I is incident pulse intensity in W/cm^2).
- Successfully performed single-shot pulse-width measurements.
- Demonstrated the convenience of inexpensive photodetectors with nonlinear characteristics.
Conclusions:
- Two-photon conductivity in Si and semiconductor devices is a viable method for ultrashort optical pulse measurement.
- The proposed technique is convenient, cost-effective, and offers an instantaneous response.
- This method is well-suited for intensity correlators and optical pulse characterization.
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