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Related Concept Videos

Diode: Forward bias01:20

Diode: Forward bias

In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...

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Investigation of diode-pumped 2.8-microm laser performance in Er:BaY(2)F(8).

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Related Experiment Video

Updated: Jun 19, 2026

20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier
10:17

20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier

Published on: July 12, 2017

Diode-pumped upconversion laser with 100-mW output power.

R R Stephens, R A McFarlane

    Optics Letters
    |October 3, 2009
    PubMed
    Summary
    This summary is machine-generated.

    Researchers developed a visible upconversion laser using a diode-laser array. This infrared-to-visible laser achieved 100 mW output power with over 5% efficiency at 551 nm.

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    Construction and Characterization of External Cavity Diode Lasers for Atomic Physics
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    Published on: April 24, 2014

    Area of Science:

    • Laser Physics
    • Solid-State Lasers
    • Optoelectronics

    Background:

    • Upconversion lasers are crucial for generating visible light from infrared sources.
    • Erbium-doped materials (Er:YLiF4) are known for their upconversion properties.
    • Diode-laser pumping offers an efficient and compact method for laser excitation.

    Purpose of the Study:

    • To demonstrate a high-power visible upconversion laser.
    • To investigate the efficiency of diode-laser pumping for upconversion processes.
    • To achieve significant visible output power from an Er:YLiF4 laser.

    Main Methods:

    • Utilized a high-power semiconductor diode-laser array operating at 797 nm as the pump source.
    • Employed an Erbium-doped Lithium Yttrium Fluoride (Er:YLiF4) crystal as the gain medium.
    • Optimized beam geometry and oscillating linewidth of the pump laser for efficient energy transfer.

    Main Results:

    • Achieved a visible output at 551 nm from the Er:YLiF4 upconversion laser.
    • Obtained 100 mW of visible output power.
    • Demonstrated a conversion efficiency greater than 5% from infrared to visible light.
    • Operated the laser at a cryogenic temperature of 48 K.

    Conclusions:

    • High-power diode-laser pumping is effective for Er:YLiF4 upconversion lasers.
    • Careful control of pump laser parameters is key to maximizing visible output.
    • This work presents a promising approach for efficient visible laser generation.