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Updated: Jun 19, 2026
Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
The structural and optical characterization of high areal density Ga(x)In(1-x)P quantum dots on GaP
S Gerhard1, V Baumann, S Höfling
1Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Technische Physik, Universität Würzburg, Würzburg, Germany. Sven.Gerhard@physik.uni-wuerzburg.de
Abstract:
We present a study of the growth, morphology and optical properties of Ga(x)In(1-x)P quantum dots (QDs) grown by molecular beam epitaxy (MBE) for various Ga concentrations x. QD areal densities up to 10(11) cm(-2) have been achieved showing strong dependence on the amount of gallium supplied. Structural properties are evaluated using scanning electron microscopy (SEM) and atomic force microscopy (AFM) and are related to photoluminescence properties of the QDs. Both structural and optical properties are promising for future applications of the herein reported QDs in visible wavelength optoelectronic devices.
