Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Schottky Barrier Diode

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...

Diode: Forward bias

Diode: Forward bias

In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

[Association between liver function indicators in early pregnancy and gestational diabetes mellitus].

Zhonghua yu fang yi xue za zhi [Chinese journal of preventive medicine]·2026

Same author

[Preparation and <i>in vitro</i> evaluation of FDM 3D printed theophylline tablets with personalized dosage].

Beijing da xue xue bao. Yi xue ban = Journal of Peking University. Health sciences·2022

Same author

Crystal orientation mapping and microindentation reveal anisotropy in Porites skeletons.

Acta biomaterialia·2022

Same author

[Preparation and <i>in vitro</i> evaluation of fused deposition modeling 3D printed compound tablets of captopril and hydrochlorothiazide].

Beijing da xue xue bao. Yi xue ban = Journal of Peking University. Health sciences·2022

Same author

[Preparation and <i>in vitro</i> evaluation of fused deposition modeling 3D printed verapa-mil hydrochloride gastric floating formulations].

Beijing da xue xue bao. Yi xue ban = Journal of Peking University. Health sciences·2021

Same author

[Preparation and evaluation of blank and doxorubicin loaded poly (acrylic acid) microspheres for embolization].

Beijing da xue xue bao. Yi xue ban = Journal of Peking University. Health sciences·2018

Search research articles

Related Experiment Video

Updated: Jun 19, 2026

20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier

20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier

Published on: July 12, 2017

Diode-pumped Q-switched Yb:YAG laser.

T Y Fan, S Klunk, G Henein

|October 6, 2009

Summary

A novel ytterbium-doped yttrium aluminum garnet (Yb:YAG) laser was developed for high-energy, short-pulse applications. This diode-pumped laser achieved significant output energy without optical damage, demonstrating its robust performance.

Area of Science:

Laser physics and engineering
Solid-state laser technology
Diode-pumped laser systems

Background:

Development of high-energy pulsed lasers is crucial for various scientific and industrial applications.
Ytterbium-doped YAG (Yb:YAG) offers advantages like low quantum defect and broad emission bandwidth.
Q-switching techniques enable generation of high peak power pulses from lasers.

Purpose of the Study:

To demonstrate a continuously-wave (cw) pumped, repetitively Q-switched Yb:YAG laser.
To characterize the laser's output energy, pulse duration, and operational stability at room temperature.
To assess the laser's performance under high saturation fluence conditions.

Main Methods:

Utilized a Yb:YAG crystal as the gain medium.

More Related Videos

Using a 1064-nm Picosecond Neodymium-Doped Yttrium Aluminum Garnet Laser for Periorbital Hyperpigmentation

Using a 1064-nm Picosecond Neodymium-Doped Yttrium Aluminum Garnet Laser for Periorbital Hyperpigmentation

Published on: May 23, 2025

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Published on: April 24, 2014

Related Experiment Videos

Last Updated: Jun 19, 2026

20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier

20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier

Published on: July 12, 2017

Using a 1064-nm Picosecond Neodymium-Doped Yttrium Aluminum Garnet Laser for Periorbital Hyperpigmentation

Using a 1064-nm Picosecond Neodymium-Doped Yttrium Aluminum Garnet Laser for Periorbital Hyperpigmentation

Published on: May 23, 2025

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Published on: April 24, 2014

Employed a continuous-wave (cw) InGaAs diode laser for pumping.

Implemented a repetitive Q-switching mechanism to generate short pulses.

Operated the laser system at room temperature.

Main Results:

Achieved an output energy of up to 72 microJ/pulse at a wavelength of 1.03 micrometers.
Obtained a short pulse duration of 11 nanoseconds (full width at half maximum).
Confirmed no optical damage to the laser components despite high saturation fluence (~10 J/cm(2)) and short pulse lengths.

Conclusions:

Successfully demonstrated a room-temperature, diode-pumped, Q-switched Yb:YAG laser.
The laser system exhibits high output energy and short pulse characteristics.
The demonstrated performance indicates the potential for robust, high-power laser applications using Yb:YAG.