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Related Experiment Video

Updated: Jun 19, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Performance optimization of Si/Gd extreme ultraviolet multilayers.

David L Windt1, Jeffrey A Bellotti, Benjawan Kjornrattanawanich

  • 1Reflective X-ray Optics LLC, 1361 Amsterdam Ave, Suite 3B, New York, New York 10027, USA. davidwindt@gmail.com

Applied Optics
|October 14, 2009
PubMed
Summary
This summary is machine-generated.

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Tungsten barrier layers in silicon/gadolinium multilayers significantly enhance extreme ultraviolet reflectance and thermal stability. Optimized Si/W/Gd structures achieve 29.7% peak reflectance near 60 nm.

Area of Science:

  • Materials Science
  • Optics
  • Thin Film Technology

Background:

  • Silicon/gadolinium (Si/Gd) multilayers are crucial for extreme ultraviolet (EUV) optics.
  • Improving the performance and stability of these multilayers is essential for advanced applications.
  • The incorporation of barrier layers is a key strategy to mitigate interdiffusion and enhance stability.

Purpose of the Study:

  • To compare the performance, stability, and microstructure of Si/Gd multilayers with different barrier layers (W, B(4)C, SiN(x)).
  • To identify the optimal barrier layer material and thickness for high reflectance and thermal stability in the EUV range.
  • To characterize the structural and optical properties of the optimized multilayer system.

Main Methods:

  • Fabrication of Si/Gd multilayers with varying thin barrier layers (W, B(4)C, SiN(x)).

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Last Updated: Jun 19, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Multi-step Variable Height Photolithography for Valved Multilayer Microfluidic Devices
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Multi-step Variable Height Photolithography for Valved Multilayer Microfluidic Devices

Published on: January 27, 2017

  • Characterization of film microstructure, interface sharpness, and film stress.
  • Measurement of optical performance, including peak reflectance and spectral bandpass in the extreme ultraviolet (EUV) spectrum.
  • Assessment of thermal stability through heating experiments.

    • Main Results:

    • Multilayers with 0.6 nm thick tungsten (W) barrier layers exhibited the best performance.
    • Si/W/Gd films showed sharper interfaces and superior thermal stability compared to Si/Gd without barriers.
    • A peak reflectance of 29.7% at lambda=62.5 nm and a spectral bandpass of 9 nm (FWHM) were achieved.
    • Optimized structures displayed relatively small compressive film stresses and good temporal stability.

    Conclusions:

    • Tungsten barrier layers are highly effective in improving both the optical performance and thermal stability of Si/Gd multilayers for EUV applications.
    • The optimized Si/W/Gd multilayer structure offers a promising solution for high-performance EUV optical coatings.
    • The findings provide valuable insights for the design and fabrication of advanced multilayer mirrors.