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20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier
Published on: July 12, 2017
Highly efficient Nd:YVO4 laser by direct in-band diode pumping at 914 nm
Damien Sangla1, Marc Castaing, François Balembois
1Laboratoire Charles Fabry de l'Institut d'Optique, CNRS, Université Paris-Sud, Campus Polytechnique, Palaiseau, France.
Optics Letters
|October 14, 2009
Abstract:
A Nd:YVO4 crystal was pumped directly into the emitting level by a laser diode at 914 nm for the first time to our knowledge. We achieved an output power of 11.5 W at 1064 nm for an absorbed pump power of 14.6 W, corresponding to an optical efficiency of 78.7%. We demonstrated that thermal effects are very weak, in agreement with the low quantum defect of only 14.1%.

