Threshold behavior and analytical fitting of partial wave capture probabilities for attractive R(-n) potentials

E I Dashevskaya1, I Litvin, E E Nikitin

  • 1Schulich Faculty of Chemistry, Technion-Israel Institute of Technology, Haifa, 32000, Israel.

Summary

Accurate analytical fittings for partial wave capture probabilities were developed for R(-n) potentials. These results validate threshold laws at low energies, proving useful for practical applications in physics.

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