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Related Concept Videos

Photoelectric Effect02:26

Photoelectric Effect

When light of a particular wavelength strikes a metal surface, electrons are emitted. This is called the photoelectric effect. The minimum frequency of light that can cause such emission of electrons is called the threshold frequency, which is specific to the metal. Light with a frequency lower than the threshold frequency, even if it is of high intensity, cannot initiate the emission of electrons. However, when the frequency is higher than the threshold value, the number of electrons ejected...

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Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters
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Toward a 1550 nm InGaAs photoconductive switch for terahertz generation.

Kimani K Williams1, Z D Taylor, J Y Suen

  • 1Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA. kimani_williams@umail.ucsb.edu

Optics Letters
|October 20, 2009
PubMed
Summary

We developed a novel terahertz (THz) switch using ErAs nanoparticles in InGaAs, achieving significant output power. This advancement in THz generation offers potential for various applications.

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Area of Science:

  • Terahertz (THz) Science and Technology
  • Nanomaterials
  • Semiconductor Devices

Background:

  • Terahertz (THz) radiation generation is crucial for advanced spectroscopy and imaging.
  • Photoconductive switches are key components in THz systems.
  • Developing efficient and stable THz sources remains an active research area.

Purpose of the Study:

  • To report on a novel terahertz (THz) photoconductive switch.
  • To characterize the THz output power and spectral properties of the device.
  • To investigate the device's performance under varying bias conditions.

Main Methods:

  • Fabrication of a composite switch with ErAs nanoparticles in In(0.53)Ga(0.47)As coupled to a square spiral antenna.
  • Measurement of THz output power in a 77 K cryostat using a Golay cell and quasi-optical filter bank.
  • Characterization of THz spectra and bias voltage dependence.

Main Results:

  • Achieved an average THz output power of approximately 12 microwatts at 22 V bias.
  • Utilized 140 mW optical pump power from a subpicosecond fiber mode-locked laser.
  • Observed THz spectra invariance to bias voltage, even near impact ionization.

Conclusions:

  • The ErAs nanoparticle composite THz switch demonstrates robust performance.
  • The device exhibits stable spectral characteristics across different bias voltages.
  • This work contributes to the development of efficient and reliable THz generation technologies.